High-frequency module

ABSTRACT

In a high-frequency module, first and second inductors that adjust attenuation characteristics of a first filter of a filter component, are separated from each other such that the first and second inductors readily magnetic field couple with each other. Consequently, an amount of wiring used to define a first wiring electrode inside the filter component is reduced and a number of layers of a package substrate and the profile of the filter component are reduced. Consequently, variations in the attenuation characteristics of the first filter caused by the first wiring electrode electromagnetic-field coupling with another wiring electrode are prevented. The attenuation characteristics of the first filter is easily adjusted and improved by adjusting the inductance value of the second inductor.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority to Japanese PatentApplication No. 2014-164030 filed on Aug. 12, 2014 and is a ContinuationApplication of PCT Application No. PCT/JP2015/072604 filed on Aug. 10,2015. The entire contents of each application are hereby incorporatedherein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a high-frequency module that includes amodule substrate on which a filter component is mounted.

2. Description of the Related Art

To date, high-frequency modules have been proposed that include a modulesubstrate on which a filter component is mounted. A filter componenthaving a chip size package (CSP) structure that includes a filtersubstrate that includes a plurality of resonators, which define afilter, provided on one main surface thereof and a package substrate onwhich the filter substrate is mounted; and a filter component having awafer level chip size package (WL-CSP) structure in which a filtersubstrate on which a filter is provided is directly mounted on a modulesubstrate have been proposed as examples of such a filter component thatis mounted on a module substrate.

Furthermore, in such a filter component, generally, an inductor ismounted that is for adjusting the characteristics of a filter that isformed of resonators that utilize elastic waves. For example, in aCSP-structure filter component, as illustrated in FIG. 7, inductors Laand Lb are provided in a package substrate 500. The package substrate500 is formed by stacking a plurality of insulating layers 501 to 504 ontop of one another and a filter substrate (not illustrated) is mountedin an area 505 enclosed by a dotted line on one main surface of theinsulating layer 504. In addition, first and second terminals 506 and507, through which an RF signal is input and output to and from a modulesubstrate on which the filter component is mounted, and third terminals508 that are connected to ground electrodes of the module substrate areformed on the other main surface of the insulating layer 501.

Furthermore, in the example illustrated in FIG. 7, a plurality ofseries-arm resonators that are arranged in a series arm connectedbetween input/output terminals of the filter and two parallel armresonators, one end of each of which is connected to the series arm, areformed on the filter substrate. The input/output terminals of the filterare connected to wiring electrodes 509 and 510, which are for extractingan RF signal, and are connected to the first and second terminals 506and 507 via interlayer connection conductors 511.

In addition, the other end of one of the parallel arm resonators isconnected to a ground wiring electrode 512 that is formed on the onemain surface of the insulating layer 504, and is connected, viainterlayer connection conductors 513, to a wiring electrode 514 that isformed on one main surface of the insulating layer 503 and forms theinductor La, to a ground wiring electrode 515 that is formed on one mainsurface of the insulating layer 502, and to the third terminal 508.Furthermore, the other end of the other parallel arm resonator isconnected to a ground wiring electrode 516 that is formed on the onemain surface of the insulating layer 504 and is connected, viainterlayer connection conductors 517, to a wiring electrode 518 that isformed on the one main surface of the insulating layer 503 and forms theinductor Lb, to the wiring electrode 515, and to the third terminal 508.

The inductor characteristics of the inductors La and Lb can be adjustedby changing the pattern shapes, the line lengths and the thicknesses ofthe wiring electrodes 514 and 518.

In the example illustrated in FIG. 7, the inductors La and Lb, whichadjust the characteristics of the filter, are arranged inside thepackage substrate 500 of the filter component. Consequently, there is aproblem in that the insulating layer 503 is necessary for arranging thewiring electrodes 514 and 518 that form the inductors La and Lb and thethickness of the filter component (package substrate 500) mounted on themodule substrate is increased.

Furthermore, if the line lengths of the wiring electrodes 514 and 518,which are for forming the inductors La and Lb, are increased and anotherwiring electrode is additionally formed in order to form anothercharacteristics-adjusting inductor without increasing the size of thepackage substrate 500 so as to not increase the size of the filtercomponent, there is a risk that the following problem will occur. Thatis, the wiring density, inside the package substrate 500, of the wiringelectrodes 514 and 518, which are for forming thecharacteristics-adjusting inductors La and Lb, is increased and thewiring electrodes 514 and 518 are arranged closer to each other.

Therefore, the wiring electrodes 514 and 518 electromagnetic-fieldcouple with each other and, for example, an unwanted capacitancecomponent is generated therebetween and consequently, there is a riskthat the attenuation characteristics of the filter will vary. Inaddition, since the space in which to arrange the wiring electrodes 514and 518 for forming the inductors La and Lb inside the package substrate500 is limited, there is a problem in that it is difficult to adjust theattenuation characteristics of the filter by adjusting the inductancevalues of the inductors La and Lb by changing the pattern shapes, theline lengths and the thicknesses of the inductors La and Lb.

SUMMARY OF THE INVENTION

Preferred embodiments of the present invention provide a technology thatprevents variations in attenuation characteristics of a filter and thatis able to easily adjust and improve the attenuation characteristics ofthe filter while reducing the profile of a filter component.

A high-frequency module according to a preferred embodiment of thepresent invention includes a filter component including a first terminalto which an RF signal is input, a first filter through which the RFsignal input to the first terminal passes, a second terminal thatoutputs the RF signal that has passed through the first filter, a thirdterminal, and a first inductor including one end connected to the firstfilter and another end connected to the third terminal; a modulesubstrate on which the filter component is mounted; and a secondinductor that is provided, inside the module substrate, directly belowthe filter component in plan view and has one end connected to the thirdterminal and another end connected to ground; wherein the first filterincludes a plurality of series arm resonators that are arranged in aseries arm that connects an input terminal and an output terminal of thefirst filter, and a plurality of parallel arm resonators that areconnected to the series arm, the one end connected to the first filterof the first inductor is connected to at least one of the plurality ofthe parallel arm resonators, and a first wiring electrode that definesthe first inductor and a second wiring electrode that defines the secondinductor are arranged so as to at least partially overlap in plan view.

In the above-described preferred embodiment of the present invention, aportion of an inductor that adjusts the first filter to desiredattenuation characteristics is provided in the module substrate as thesecond inductor. Consequently, the area occupied by the first wiringelectrode inside the filter component is able to be reduced byshortening the line length of the first wiring electrode that definesthe first inductor that is provided inside the filter component in orderto adjust the attenuation characteristics of the first filter.Therefore, since the number of insulating layers is able to be reducedwhen the first wiring electrode is formed on an insulating layer, theprofile of the filter component is able to be reduced. Furthermore,since the second wiring electrode that defines the second inductor isarranged in a region that overlaps the filter component in plan view,the module substrate in which the second wiring electrode is provided isable to be made smaller in terms of the area thereof and consequentlythe high-frequency module is able to be reduced in size.

Furthermore, since the area occupied by the first wiring electrodeinside the filter component is able to be reduced by shortening the linelength of the first wiring electrode, electromagnetic-field couplingbetween another wiring electrode that defines another inductor and soforth and the first wiring electrode located inside the filter componentis able to be suppressed. Therefore, variations in the attenuationcharacteristics of the first filter caused by changes in thecharacteristics of the first inductor and so forth are able to beprevented.

In addition, the inductance value of the second inductor is able to befreely adjusted by simply changing the pattern shape, line length andthickness of the second wiring electrode inside the module substrate inwhich there is a higher degree of freedom in terms of arranging wiringelectrodes compared with the filter component. Therefore, the degree offreedom in designing a characteristics-adjusting inductor including boththe first inductor and the second inductor is able to be increased andas a result the first filter is able to be easily adjusted to desiredattenuation characteristics.

In addition, the first wiring electrode and the second wiring electrodeare arranged so as to at least partially overlap in plan view andconsequently the first inductor and the second inductor are able to beeasily made to magnetic field couple with each other. Accordingly, evenin the case where the high-frequency module is reduced in size and thespace in which the first inductor and the second inductor are able to bearranged is limited, the inductor characteristics of thecharacteristics-adjusting inductor including both the first inductor andthe second inductor can be improved. Therefore, the attenuationcharacteristics of the first filter are able to be more easily adjustedand improved.

Furthermore, the first wiring electrode and the second wiring electrodeare preferably formed and structured such that currents that flow inportions thereof where the first wiring electrode and the second wiringelectrode overlap flow in the same direction.

With this configuration, the first wiring electrode and the secondwiring electrode are able to be more easily made to magnetic fieldcouple with each other and therefore the inductor characteristics of acharacteristics-adjusting inductor including both the first inductor andthe second inductor are able to be further improved.

In addition, it is preferable that the first inductor and the secondinductor have the same inductor structure of a spiral or helical shapeand that the first wiring electrode and the second wiring electrode bewound in the same direction.

With this configuration, the direction of the magnetic field generatedby the first inductor and the direction of the magnetic field generatedby the second inductor are the same and therefore spreading of themagnetic field generated by the inductor that adjusts thecharacteristics of the first filter is able to be suppressed. Therefore,for example, magnetic field coupling between the first and secondinductors and other circuit elements is able to be prevented.

In addition, it is preferable that the filter component include a filtersubstrate on which the plurality of series arm resonators and theplurality of parallel arm resonators are provided in a prescribed areaof one main surface thereof, and a package substrate on which the filtersubstrate is mounted, and that the first wiring electrode be providedinside the package substrate.

With this configuration, a high-frequency module having a practicalconfiguration is able to be provided in which a CSP-structure filtercomponent is mounted on the module substrate, the filter componenthaving a low profile as a result of the package substrate, in which thefirst wiring electrode is provided, being formed so as to be thin.

In addition, the filter component may include a filter substrate onwhich the plurality of series arm resonators and the plurality ofparallel arm resonators are provided in a prescribed area of one mainsurface thereof, an insulating layer that surrounds the prescribed area,a cover layer that is arranged on the insulating layer and covers theplurality of series arm resonators and the plurality of parallel armresonators, and a space that is surrounded by the filter substrate, theinsulating layer and the cover layer, the first terminal, the secondterminal and the third terminal may be exposed at a main surface on aside opposite the surface where the space is located and may beconnected to mounting electrodes provided on a mounting surface of themodule substrate, and the first wiring electrode may be provided insidethe cover layer.

With this configuration, the WL-CSP-structure filter component ismounted on the module substrate, the profile of the filter componenthaving been further reduced as a result of the cover layer, in which thefirst wiring electrode is provided, being formed so as to be thin.Therefore, a high-frequency module that has been further reduced inprofile and size is able to be provided.

Furthermore, it is preferable that the high-frequency module furtherinclude a third inductor that adjusts characteristics of the firstfilter, the third inductor including a third wiring electrode providedinside the module substrate, having one end thereof connected to atleast one of the plurality of parallel arm resonators and another endthereof connected to ground, and it is preferable that the second wiringelectrode and the third wiring electrode be structured such thatdirections of currents that flow through the second inductor and thethird inductor are opposite to each other.

With this configuration, magnetic field coupling between the secondinductor and the third inductor inside the module substrate issuppressed. Therefore, variations in the inductor characteristics of thesecond inductor and the third inductor are suppressed and consequentlythe attenuation characteristics of the first filter are able to beimproved by preventing degradation of the attenuation characteristics ofthe first filter.

In addition, it is preferable that the filter component further includea second filter that includes a plurality of resonators and throughwhich an RF signal input to the second terminal passes, and a fourthterminal that outputs the RF signal that has passed through the secondfilter, a pass band of the first filter being a frequency band of atransmission signal and a pass band of the second filter being afrequency band of a reception signal.

With this configuration, since the attenuation characteristics of thefirst filter are improved by the first and second inductors, which arearranged so as to be separated from each other, a high-frequency modulethat includes the first filter and the second filter having improvedisolation characteristics is able to be provided.

According to various preferred embodiments of the present invention, thefirst and second inductors, which adjust the attenuation characteristicsof the first filter of the filter component, are separated from eachother in a state where the first and second inductors readily magneticfield couple with each other, and consequently the amount of wiring usedto define the first wiring electrode inside the filter component is ableto be reduced. Therefore, for example, the profile of the filtercomponent is able to be reduced by reducing the number of insulatinglayers when the first wiring electrode is formed on an insulating layer.Furthermore, since the wiring density of the first wiring electrodeinside the filter component is able to be reduced, variations in theattenuation characteristics of the first filter caused by changes in theinductor characteristics of the first inductor due to the first wiringelectrode electromagnetic-field coupling with another wiring electrodeis able to be prevented. In addition, the inductor characteristics ofthe characteristics-adjusting inductor including both the first inductorand the second inductor are able to be adjusted by adjusting theinductance value of the second inductor by changing the configuration ofthe second wiring electrode, and therefore the attenuationcharacteristics of the first filter are able to be easily adjusted andimproved.

The above and other elements, features, steps, characteristics andadvantages of the present invention will become more apparent from thefollowing detailed description of the preferred embodiments withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a first preferred embodiment of a high-frequencymodule according to a preferred embodiment of the present invention.

FIG. 2 is a circuit block diagram that illustrates the electricalconfiguration of the high-frequency module of FIG. 1.

FIG. 3 illustrates the arrangement relationship between a first wiringelectrode and a second wiring electrode in plan view.

FIG. 4 illustrates the isolation characteristics between a first filterand a second filter.

FIGS. 5A-5F illustrate different structural modifications of a wiringelectrode that defines an inductor.

FIG. 6 illustrates a second preferred embodiment of a high-frequencymodule according to a preferred embodiment of the present invention.

FIG. 7 illustrates a package substrate of a filter component included ina high-frequency module of the related art.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First PreferredEmbodiment

A first preferred embodiment of a high-frequency module according to apreferred embodiment of the present invention will be described whilereferring to FIGS. 1 to 5F. FIG. 1 illustrates a high-frequency moduleaccording to a preferred embodiment of the present invention, FIG. 2 isa circuit block diagram that illustrates the electrical configuration ofthe high-frequency module of FIG. 1 and FIG. 3 illustrates thearrangement relationship between a first wiring electrode and a secondwiring electrode in plan view. FIG. 4 illustrates the isolationcharacteristics between a first filter and a second filter. FIGS. 5A-5Fillustrate different structural modifications of a wiring electrode ofan inductor.

In FIGS. 1 to 3, only important portions of the structures of preferredembodiments of the present invention are illustrated and illustration ofother portions of the configuration is omitted in order to simplify thedescription. Furthermore, in FIG. 6 as well referred to in subsequentdescription, only the important portions of the structures of preferredembodiments of the present invention are illustrated, as in FIGS. 1 to3, and description thereof is omitted in the subsequent description.

A high-frequency module 1 illustrated in FIGS. 1 and 2 is to be mountedon a mother substrate of a mobile communication terminal such as acellular phone or a mobile information terminal, and, in this preferredembodiment, includes a filter component 10 (duplexer) that is providedwith a first filter 14 and a second filter 15, a module substrate 2, amatching network 3, and various electronic components (not illustrated)such as switch ICs, filters, resistors, capacitors and coils, anddefines a high-frequency antenna switching module.

In addition, the filter component 10, a chip inductor 3 a to define thematching network 3 and at least some of the other various electroniccomponents are mounted on mounting electrodes 2 b provided on a mountingsurface 2 a of a module substrate 2. The various components 10 and 3 aand electronic components etc. are electrically connected to a pluralityof mounting electrodes 5 provided on a rear surface of the modulesubstrate 2 via wiring electrodes 4 provided in the module substrate 2.In addition, a transmission electrode Txa to which a transmission signalis input from the outside, a common electrode ANTa from which atransmission signal input to the transmission electrode Txa is output tothe outside and to which a reception signal is input from the outside, areception electrode Rxa that outputs a reception signal input to thecommon electrode ANTa to the outside and a ground electrode GNDa that isconnected to a ground path GND are defined by the mounting electrodes 5.

Furthermore, wiring electrodes that correspond to various signal pathssuch as a common path, the ground path, a transmission path and areception path are provided on the mother substrate of the mobilecommunication terminal. The high-frequency module 1 is mounted on themother substrate, and as a result the wiring electrodes that define thevarious paths, and the common electrode ANTa, the ground electrode GNDa(ground), the transmission electrode Txa and the reception electrode Rxaare connected to each other and transmission and reception signals areinput and output between the mother substrate and the high-frequencymodule 1.

In this preferred embodiment, the module substrate 2 preferably isintegrally formed as a ceramic multilayer body by stacking a pluralityof dielectric layers formed of ceramic green sheets on top of oneanother and then firing the stacked dielectric layers.

In addition, the wiring electrodes 4, the mounting electrodes 5, asecond wiring electrode 6 that defines a second inductor L2, a thirdwiring electrode 7 that defines a third inductor L3, and so forth areformed in the module substrate 2 preferably by appropriately forming viaconductors and in-plane conductor patterns in and on the dielectriclayers. The second and third inductors L2 and L3 adjust thecharacteristics of the first filter 14. In addition, circuit elementssuch as other inductors, capacitors and the like may be additionallydefined by in-plane conductor patterns and via conductors provided onand in the dielectric layers. Furthermore, various circuits such as afilter circuit and the matching network 3 may be provided by combiningsuch circuit elements. The connection states between the inductors L2and L3 and the first filter 14 will be described in detail later.

The module substrate 2 may be a multilayer substrate such as a printedsubstrate, an LTCC, an alumina-based substrate or a composite materialsubstrate using, for example, a resin, a ceramic or a polymer material,and the module substrate 2 preferably is formed by selecting the mostsuitable material in accordance with the intended use of thehigh-frequency module 1.

In this preferred embodiment, the matching network 3 preferably includesthe chip inductor 3 a mounted on the mounting surface 2 a of the modulesubstrate 2. Specifically, one end of the inductor 3 a is connected to apath that connects a common terminal ANTb (corresponds to “secondterminal”) of the filter component 10 and the common electrode ANTa ofthe module substrate 2. The other end of the inductor 3 a is connectedto the ground electrode GNDa (ground) via a ground connection wiringelectrode provided in the module substrate 2, and thus the matchingnetwork 3 is provided.

The matching network 3 is not limited to the configuration illustratedin FIG. 2, and the matching network 3 may be formed by replacing theinductor 3 a illustrated in FIG. 2 with a capacitor, or the matchingnetwork 3 may be formed by connecting an inductor or a capacitor inseries to a path that connects the common electrode ANTa and the commonterminal ANTb. In addition, the matching network 3 may be formed byusing an inductor and a capacitor in combination with each other. Thatis, the matching network 3 may have any circuit configuration that wouldbe typically used to match the impedances of a circuit element such asan antenna connected to the common electrode ANTa and the filtercomponent 10 connected to the common terminal ANTb in the high-frequencymodule 1. In addition, matching networks 3 may be additionally providedon the side of a transmission terminal Txb and a reception terminal Txb.

The filter component 10 preferably has a chip size package (CSP)structure and includes a filter substrate 11 on which the first filter14 and the second filter 15 are provided in a prescribed area of onemain surface thereof, a package substrate 12 on which the filtersubstrate 11 is mounted, a resin layer 13 that is provided on thepackage substrate 12 so as to cover the filter substrate 11, atransmission terminal Txb (corresponding to “first terminal”), a commonterminal ANTb, a reception terminal Rxb (corresponding to “fourthterminal”) and a plurality of ground terminals GNDb (corresponding to“third terminal”).

In addition, a transmission signal is input to the transmission terminalTxb from the transmission electrode Txa, and the transmission signal isoutput to the common electrode ANTa from the common terminal ANTb viathe first filter 14. Furthermore, a reception signal is input to thecommon terminal ANTb from the common electrode ANTa and the receptionsignal is output to the reception electrode Rxa from the receptionterminal Rxb via the second filter 15.

The filter substrate 11 is preferably made of a piezoelectric materialsuch as lithium niobate, lithium tantalate or a crystal in thispreferred embodiment. In addition, the first filter 14 and the secondfilter 15 are formed on the filter substrate 11 preferably by formingsurface acoustic wave (SAW) filter elements by providing comb-toothelectrodes (IDT electrodes) and reflectors formed of Al, Cu or the likein a prescribed area on one main surface of the filter substrate 11.

Furthermore, an input terminal 14 a and an output terminal 14 b of thefirst filter 14, an input terminal 15 a and an output terminal 15 b ofthe second filter 15 and ground wiring outside connection terminals GNDcare provided on the filter substrate 11.

In this preferred embodiment, the package substrate 12 preferably isintegrally formed as a ceramic multilayer body by stacking a pluralityof dielectric layers formed of ceramic green sheets on top of oneanother and then firing the stacked dielectric layers, similarly to themodule substrate 2. In addition, similarly to as the module substrate 2,via conductors and in-plane conductor patterns are appropriately formedin and on the dielectric layers, such that inner wiring electrodes (notillustrated), mounting electrodes 16 and a first wiring electrode 17that defines a first inductor L1 are provided in the package substrate12. The transmission terminal Txb, the common terminal ANTb, thereception terminal Rxb and the ground terminals GNDb are defined by themounting electrodes 16. In addition, the first inductor L1 adjusts thecharacteristics of the first filter 14.

The package substrate 12 may be a multilayer substrate such as a printedsubstrate, an LTCC, an alumina-based substrate or a composite materialsubstrate using, for example, a resin, a ceramic or a polymer material,and the package substrate 12 preferably is formed by selecting the mostsuitable material in accordance with the intended use of thehigh-frequency module 1.

The filter substrate 11 is connected to mounting electrodes (notillustrated) located on the surface of the package substrate 12 by usingbonding wires (not illustrated) or ultrasound vibration and is thusmounted on the package substrate 12. Thus, through inner wiringelectrodes, which are not illustrated, the input terminal 14 a of thefirst filter 14 and the transmission terminal Txb are connected to eachother, the output terminal 15 b of the second filter 15 and thereception terminal Rxb are connected to each other, and the outputterminal 14 b of the first filter 14, the input terminal 15 a of thesecond filter 15 and the common terminal ANTb are connected to eachother. Furthermore, the outside connection terminals GNDc and the groundterminals GNDb are directly connected to each other using an innerwiring electrodes or are connected to each other via the first inductorL1 (first wiring electrode 17).

The resin layer 13 is formed on the package substrate 12 using a typicalthermally curable sealing resin such as epoxy resin so as to cover thefilter substrate 11. The filter component 10 is connected to themounting electrodes 2 b on the mounting surface 2 a of the modulesubstrate 2 via solder balls 18 provided on the mounting electrodes 16.

The configurations of the first filter 14 and the second filter 15 willbe described next. The frequency band of a transmission signal is set asthe pass band of the first filter 14 and the frequency band of areception signal, which is different to the frequency band of thetransmission signal, is set as the pass band of the second filter 15.

As illustrated in FIG. 2, the first filter 14 is located in a prescribedarea on the one main surface of the filter substrate 11 by connecting aplurality of SAW resonators, which include comb-tooth electrodes andreflectors, in a ladder configuration. Specifically, the first filter 14includes a plurality of resonators S1 to S9 (for example, nine in thispreferred embodiment) that are arranged in a series arm that connectsthe input terminal 14 a and the output terminal 14 b, and a plurality ofparallel arm resonators P1 to P6 (for example, six in this preferredembodiment) connected between the series arm and the ground wiringoutside connection terminals GNDc (ground terminals GNDb).

Furthermore, one end of the parallel arm resonator P1 is connectedbetween the series arm resonators S6 and S7 and the other end of theparallel arm resonator P1 is connected to one end of the parallel armresonator P2. In addition, the other end of the parallel arm resonatorP2 is connected to a ground wiring outside connection terminal GNDc. Oneend of the inductor L1, which is provided inside the package substrate2, is connected to the other end of the parallel arm resonator P2 (firstfilter 14) via an outside connection terminal GNDc and the other end ofthe inductor L1 is connected to a ground terminal GNDb. In addition, oneend of the inductor L2 is connected to a ground terminal GNDb and isconnected to the other end of the first inductor L1, and the other endof the inductor L2 is connected to the ground electrode GNDa, such thatthe parallel arm resonators P1 and P2 are connected to the groundelectrode GNDa (ground).

Furthermore, one end of the parallel arm resonator P3 is connectedbetween the series arm resonators S3 and S4 and the other end of theparallel arm resonator P3 is connected to one end of the parallel armresonator P4. One end of the parallel arm resonator P5 is connectedbetween the series arm resonator S1 and the input terminal 14 a and theother end of the parallel arm resonator P5 is connected to one end ofthe parallel arm resonator P6. The other ends of the parallel armresonators P4 and P6 are connected to a ground terminal GNDb via aground wiring outside connection terminal GNDc. One end of the inductorL3 is connected to the other ends of the parallel arm resonators P4 andP6 (first filter 14) via the ground terminal GNDb and the other end ofthe inductor L3 is connected to the ground electrode GNDa (ground), suchthat the parallel arm resonators P3 to P6 are connected to the groundelectrode GNDa (ground).

In addition, the attenuation characteristics of the first filter 14 areable to be adjusted by appropriately adjusting the inductance values ofthe inductors L1 to L3. Specifically, an attenuation pole is able to begenerated at the position of an arbitrary frequency on the low-frequencyside or the high-frequency side of the pass band of the first filter 14by adjusting the inductance values of the inductors L1 to L3.Furthermore, the resonators S1 to S9 and P1 to P6 are preferablyprovided by arranging reflectors at both sides of the comb-toothelectrodes in the propagation direction of surface acoustic waves, andthe resonators S1 to S9 and P1 to P6 are connected to the groundelectrode GNDa (ground) by being connected to the ground terminals GNDbvia inner wiring electrodes, which are not illustrated, inside thefilter component 10.

A reception SAW filter element of the second filter 15 outputs areception signal of a second frequency band, which is input from thecommon terminal ANTb, to the reception terminal Rxb. In addition, asillustrated in FIG. 2, the second filter 15 is provided in a prescribedarea on the one main surface of the filter substrate 11 by connecting aplurality of resonators, which each include comb-tooth electrodes andreflectors, to each other. Furthermore, the second filter 15 is providedby serially connecting a resonator that defines a phase shifter andlongitudinally-coupled-type resonators that form a band pass filter, forexample. The detail explanation is omitted. In addition, similarly to asin the first filter 14 described above, the resonators that form thesecond filter 15 are connected to the ground electrode GNDa (ground) viainner wiring electrodes, which are not illustrated, inside the filtercomponent 10 and the ground terminals GNDb.

The second filter 15 may be a balanced filter in which two receptionterminals Rxb are provided and a reception signal is output in abalanced manner.

In this preferred embodiment, the first to third inductors L1 to L3,which adjust the characteristics of the first filter 14 of the filtercomponent 10, are provided. The first inductor L1 is defined by thefirst wiring electrode 17 formed in the package substrate 12. The secondand third inductors L2 and L3 are defined by the second and third wiringelectrodes 6 and 7 provided in the module substrate 2. In addition, inthis preferred embodiment, as illustrated in FIG. 1, the second wiringelectrode 6, which defines the second inductor L2, is arranged, insidethe module substrate 2, directly below the filter component 10 in planview and a shielding ground electrode is not arranged between the filtercomponent 10 and the second inductor L2.

Furthermore, the first inductor L1 and the second inductor L2 areconnected in series with each other via a ground terminal GNDb. Inaddition, as illustrated in FIGS. 1 and 3, the first wiring electrode17, which defines the first inductor L1, and the second wiring electrode6, which defines the second inductor L2, are arranged so as to at leastpartially overlap in plan view. It is preferable that the first wiringelectrode 17 and the second wiring electrode 6 overlap as much aspossible in plan view. Furthermore, in this preferred embodiment, thefirst wiring electrode 17 and the second wiring electrode 6 arestructured such that a current I1 that flows through the first wiringelectrode 17 and a current I2 that flows through the second wiringelectrode 6 flow in the same direction in portions of the electrodeswhere the first wiring electrode 17 and the second wiring electrode 6overlap.

Specifically, the first inductor L1 and the second inductor L2 aredefined by the first wiring electrode 17 and the second wiring electrode6, which preferably include a spiral or helical inductor structure. Inaddition, the first wiring electrode 17 and the second wiring electrode6 are wound in the same direction.

Furthermore, the third wiring electrode 7, which defines the thirdinductor L3, is provided inside the module substrate 2. In thispreferred embodiment, the second wiring electrode 6 and the third wiringelectrode 7 are structured such that the directions of currents thatflow through the second inductor L2 and the third inductor L3 areopposite to each other. It is preferable that the distance between thethird wiring electrode 7 and the second wiring electrode 6 be longerthan the distance between the first wiring electrode 17 and the secondwiring electrode 6.

Next, an outline of an example of a method of manufacturing thehigh-frequency module 1 of FIG. 1 will be described.

First, ceramic green sheets for forming the dielectric layers that willform the module substrate 2 are prepared as follows. Via conductors(wiring electrodes 4, 6 and 7) that provide connections between layersare formed by forming via holes, using for example a laser, in ceramicgreen sheets that have been formed in a predetermined shape, thenfilling the insides of the via holes with a conductive paste and thenperforming via fill plating, and, then, wiring patterns such as in-planeconductor patterns (wiring electrodes 4, 6 and 7), the mountingelectrodes 2 b on the mounting surface 2 a and the mounting electrodes 5are formed by performing printing using a conductive paste. A pluralityof via conductors and in-plane conductor patterns are provided on and inthe ceramic green sheets so that it is possible to form a large numberof module substrates 2 in one step/process.

Next, the dielectric layers are stacked on top of one another to form amultilayer body. Grooves, which will be used to divide the multilayerbody into individual module substrates 2 after firing, are formed so asto surround the regions corresponding to the individual modulesubstrates 2. Next, formation of an agglomeration of module substrates 2is completed by subjecting the multilayer body to low-temperaturefiring.

Next, before dividing the agglomeration into individual modulesubstrates 2, various electronic components such as the filter component10 and the inductor 3 a are mounted on the mounting surfaces 2 a of theagglomeration of module substrates 2 and manufacture of theagglomeration of module substrate 2, such that the agglomeration of thehigh-frequency module 1 is complete. In addition, at this time, a resinlayer may be provided by applying a resin onto the mounting surfaces 2 aof the agglomeration of module substrates 2 so as to cover the filtercomponents 10 and the inductors 3 a and then thermally curing the resin.After that, the agglomeration of high-frequency modules 1 is dividedinto individual high-frequency modules 1 and manufacture of thehigh-frequency module 1 is complete.

In the thus-formed high-frequency module 1, a transmission signal outputto the transmission terminal Txb of the filter component 10 via amounting electrode 5 and a wiring electrode 4 from the mother substrateis input to the first filter 14, undergoes prescribed filter processing,is output to the module substrate 2 from the common terminal ANTb and isoutput to the outside via a wiring electrode 4 (matching network 3) anda mounting electrode 5. Furthermore, a reception signal input from theoutside to the common terminal ANTb of the filter component 10 via amounting electrode 5 and a wiring electrode 4 (matching network 3) isinput to the second filter 15, undergoes prescribed filter processing,is output to the module substrate 2 from the reception terminal Rxb andis output to the outside via a wiring electrode 4 and a mountingelectrode 5.

Next, the isolation characteristics of the high-frequency module 1 willbe described. The isolation characteristics illustrated in FIG. 4indicate the magnitude of an RF signal measured at the receptionelectrode Rxa (reception terminal Rxb) when an RF signal of an arbitraryfrequency is input to the transmission electrode Txa (transmissionterminal Txb). The horizontal axis in FIG. 4 represents the frequency(MHz) of the RF signal input to the transmission electrode Txa and thevertical axis in FIG. 4 represents the signal level (dB) of the RFsignal measured at the reception electrode Rxb.

Furthermore, the solid line in FIG. 4 represents isolationcharacteristics obtained when a prescribed RF signal is input to thehigh-frequency module 1 in which the second inductor L2, which isserially connected to the first inductor L1, is provided inside themodule substrate 2 as described above, and the dotted line in the samefigure represents isolation characteristics obtained when a prescribedRF signal is input to a high-frequency module that is not equipped withthe second inductor L2, as a comparative example.

As illustrated in FIG. 4, in the practical example of this application,in particular, the isolation characteristics in the frequency band ofthe reception signal set on the high-frequency side (M4 band in thisexample) are improved by around 3.4 dB when compared with thecomparative example.

Modifications of the wiring electrodes 6, 7 and 17 that define theinductors L1 to L3 provided inside the module substrate 2 and theinductor component 10 will be described while referring to FIGS. 5A-5F.FIGS. 5A-5F illustrate different structure modifications of a wiringelectrode that defines an inductor. The wiring electrodes describedhereafter are to be provided on an insulating layer included in themodule substrate 2 or the package substrate 12 and the inductors L1 toL3 may be provided by combining the wiring electrodes describedhereafter in any manner in accordance with the characteristics requiredfor the inductors.

A wiring electrode E1 illustrated in FIG. 5A preferably has a meanderingshape and a wiring electrode E2 illustrated in FIG. 5B preferably has aspiral shape. In addition, a wiring electrode E3 illustrated in FIG. 5Cpreferably has a spiral shape, and one lead-out electrode (dotted lineportion in the same figure) is provided on a different insulating layerto the main portion of the wiring electrode E3 and is connected to themain portion of the wiring electrode E3 with a via conductor.Furthermore, a wiring electrode E4 illustrated in FIG. 5D preferably hasa straight-line shape.

In addition, a wiring electrode E5 illustrated in FIG. 5E includes aplurality of substantially L-shaped in-plane conductor patterns E5 athat are respectively provided on a plurality of insulating layers.Furthermore, the substantially L-shaped in-plane conductor patterns E5 aat the first and third layer from the top are arranged with the sameorientation and the substantially L-shaped in-plane conductor patternsE5 a at the second and fourth layer from the top are arranged withorientations that are obtained by rotating the first and third in-planeconductor patterns E5 a through approximately 180°. A first end of thefirst in-plane conductor pattern E5 a on the short side and a second endof the second in-plane conductor pattern E5 a on the long side areconnected to each other by a via conductor E5 b, a first end of thesecond in-plane conductor pattern E5 a on the short side and a secondend of the third in-plane conductor pattern E5 a on the long side areconnected to each other by a via conductor E5 b, and a first end of thethird in-plane conductor pattern on the short side and a second end ofthe fourth in-plane conductor pattern E5 a on the long side areconnected to each other by a via conductor E5 b, such that thespiral-shaped wiring electrode E5 is provided.

In addition, a wiring electrode E6 illustrated in FIG. 5F has a shapethat winds around an annular toroidal coil core E6 a in a spiral shape.

As described above, in this preferred embodiment, one of the inductorsthat adjust the first filter 14 of the filter component 10 to desiredattenuation characteristics is provided in the module substrate 2 as thesecond inductor L2. Consequently, the area occupied by the first wiringelectrode 17 inside the filter component is able to be reduced byshortening the line length of the first wiring electrode 17 that definesthe first inductor L1 that is provided inside the filter component 10 inorder to adjust the attenuation characteristics of the first filter 14.Therefore, since the number of insulating layers is able to be reducedwhen the first wiring electrode 17 is formed on an insulating layer ofthe package substrate 12, the profile of the filter component 10 is ableto be reduced. Furthermore, the second wiring electrode 6, which definesthe second inductor L2, may be arranged in an area that overlaps thefilter component 10 in plan view due to the second inductor L2 beingarranged directly below the filter component 10. Therefore, thehigh-frequency module 1 is able to be reduced in size by reducing thearea of the module substrate 2 in which the second wiring electrode 6 islocated.

Furthermore, since the area occupied by the first wiring electrode 17inside the filter component 10 can be reduced by shortening the linelength of the first wiring electrode 17, electromagnetic-field couplingbetween other wiring electrodes that define other inductors and so forthand the first wiring electrode 17 arranged inside the filter component10 is able to be suppressed. Therefore, variations in the attenuationcharacteristics of the first filter 14 caused by changes in the devicecharacteristics of the first inductor L1 and so forth are able to beprevented.

Furthermore, the inductance value of the second inductor L2 is able tobe freely adjusted by simply changing the pattern shape, line length andthickness of the second wiring electrode 6 inside the module substrate2, in which it is easier to secure space in which to arrange wiringelectrodes compared with the filter component 10. Therefore, the degreeof freedom in designing a characteristics-adjusting inductor includingboth the first inductor L1 and the second inductor L2 is able to beincreased and as a result the first filter 14 is able to be easilyadjusted to desired attenuation characteristics.

In addition, the first wiring electrode 17 and the second wiringelectrode 6 at least partially overlap in plan view and consequently,the first inductor L1 and the second inductor L2 is able to be easilymade to magnetic field couple with each other. Accordingly, even in thecase where the high-frequency module 1 is reduced in size and the spacein which the first inductor L1 and the second inductor L2 are able to bearranged is limited, the inductor characteristics of thecharacteristics-adjusting inductor including both the first inductor L1and the second inductor L2 are able to be improved. Therefore, theattenuation characteristics of the first filter 14 are able to be moreeasily adjusted and improved.

Furthermore, since the first wiring electrode 17 and the second wiringelectrode 6 are structured such that currents flow in the same directionin portions of the electrodes where the first wiring electrode 17 andthe second wiring electrode 6 overlap, the first wiring electrode 17 andthe second wiring electrode 6 are able to be more easily made tomagnetic field couple with each other. Therefore, the inductorcharacteristics of the characteristics-adjusting inductor including boththe first inductor L1 and the second inductor L2 are able to be furtherimproved. In addition, in this preferred embodiment, since a shieldingground electrode is not arranged between the filter component 10 and thesecond inductor L2, magnetic flux generated by the inductors L1 and L2is not obstructed and therefore the inductor characteristics of thecharacteristics-adjusting inductor including both the first inductor L1and the second inductor L2 are able to be still further improved.

Furthermore, as a result of the first inductor L1 and the secondinductor L2 including the first wiring electrode 17 and the secondwiring electrode 6 that are provided with the same inductor structurehaving a spiral or helical shape and the first wiring electrode 17 andthe second wiring electrode 6 being wound in the same direction, thefollowing effect is realized. That is, the direction of the magneticfield generated by the first inductor L1 and the direction of themagnetic field generated by the second inductor L2 are the same andtherefore spreading of the magnetic field generated by the inductor toadjust the characteristics of the first filter 14 is able to besuppressed. Therefore, for example, magnetic field coupling between thefirst and second inductors L1 and L2 and other circuit elements is ableto be prevented.

In addition, the high-frequency module 1 is able to be provided that hasa practical configuration in which the CSP-structure filter component 10is mounted on the module substrate 2, the filter component 10 having alow profile as a result of it being possible to form the packagesubstrate 12, in which the first wiring electrode 17 is provided, so asto be thin.

Furthermore, the second wiring electrode 6 and the third wiringelectrode 7 are structured such that currents flow in oppositedirections through the second inductor L2 and the third inductor L3 andtherefore magnetic field coupling of the second inductor L2 and thethird inductor L3 inside the module substrate is suppressed. Therefore,variations in the inductor characteristics of the second inductor L2 andthe third inductor L3 are suppressed and therefore the attenuationcharacteristics of the first filter 14 are able to be improved bypreventing degradation of the attenuation characteristics of the firstfilter 14.

Furthermore, since the attenuation characteristics of the first filter14 are improved by the first and second inductors L1 and L2, which arearranged so as to be separated from each other, the high-frequencymodule 1 is able to be provided that includes the first filter 14 andthe second filter 15 having improved isolation characteristics.

Second Preferred Embodiment

Next, a second preferred embodiment of the present invention will bedescribed while referring to FIG. 6. FIG. 6 illustrates a secondpreferred embodiment of a high-frequency module according to a preferredembodiment of the present invention.

This preferred embodiment differs from the first preferred embodimentdescribed above in that, as illustrated in FIG. 6, a filter component 20preferably has a wafer level chip size package (WL-CSP) structure andthe first wiring electrode 17 that defines the first inductor L1 isprovided in a cover layer 23. Other portions of the configuration arethe same as in the first preferred embodiment described above andtherefore the same symbols are used and description thereof is omitted.

The filter component 20 includes the filter substrate 11, an insulatinglayer 22, the cover layer 23, the first filter 14 and the second filter15.

In this preferred embodiment, the first filter 14 and the second filter15 are formed by constructing surface acoustic wave (SAW) resonators byproviding comb-tooth electrodes (IDT electrodes) and reflectors formedof Al, Cu or the like in a prescribed area on one main surface 11 a ofthe filter substrate 11, similarly to as in the above-described firstpreferred embodiment. Furthermore, the input terminal 14 a and theoutput terminal 14 b of the first filter 14, the input terminal 15 a andthe output terminal 15 b of the second filter 15 and terminal electrodes24 that define the ground wiring outside connection terminals GNDc areprovided on the one main surface 11 a of the filter substrate 11.

Then, electrodes 25, which penetrate through the insulating layer 22,are connected to the terminal electrodes 24 and the transmissionterminal Txb, the reception terminal Rxb, the common terminal ANTb and aplurality of ground terminals GNDb are defined by the electrodes 25,which are exposed from a main surface of the cover layer 23. The inputterminal 14 a of the first filter 14 and the transmission terminal Txbare connected to each other, the output terminal 15 b of the secondfilter 15 and the reception terminal Rxb are connected to each other,and the output terminal 14 b of the first filter 14, the input terminal15 a of the second filter 15 and the common terminal ANTb are connectedto each other. In addition, the SAW resonators are connected to theground terminals GNDb via ground wiring ground terminals GNDc.

The insulating layer 22 surrounds a prescribed area of the one mainsurface 11 a of the filter substrate 11, comb-tooth electrodes andreflectors being provided in the prescribed area. Specifically, theinsulating layer 22 is provided preferably by forming a resin layerusing a photosensitive epoxy-based resin or polyimide-based resin on theone main surface 11 a of the filter substrate 11, on which thecomb-tooth electrodes, reflectors and terminal electrodes 24 areprovided, and then removing the resin layer from the prescribed area inwhich the comb-tooth electrodes and reflectors are provided and from theregions in which the terminal electrodes 24 are provided through aphotolithography process.

The cover layer 23 is arranged on the insulating layer 22 and defines,together with insulating layer 22, an enclosed space K between the coverlayer 23 and the filter substrate 11, and a transmission SAW filterelement and a reception SAW filter element are arranged inside the spaceK. Specifically, for example, the cover layer 23 is provided preferablyby forming the electrodes 25 that are connected to the terminalelectrodes 24 by charging a Cu or Al paste into connection holes inresin layers stacked on the insulating layer 22 and performing via fillplating through a photolithography process using a photosensitiveepoxy-based resin or polyimide-based resin. Furthermore, in thispreferred embodiment, the first wiring electrode 17, which defines thefirst inductor L1, is provided in or on the cover layer 23. Then,mounting solder balls 26 are formed on the electrodes 25, which areconnected to the terminal electrodes 24 and are exposed from the mainsurface of the cover layer 23 on the side opposite the space in whichthe filter elements are arranged, and formation of the filter component20 is thus completed.

In addition, the filter component 20 is connected to the mountingelectrodes 2 b on the mounting surface 2 a such that the cover layer 23faces the mounting surface 2 a of the module substrate 2, such that thetransmission electrode Txa of the module substrate 2 and thetransmission terminal Txb of the filter component 20 are connected toeach other and the transmission electrode Txa and the input terminal 14a of the first filter 14 are connected each other via the transmissionterminal Txb. Furthermore, the reception electrode Rxa of the modulesubstrate 2 and the reception terminal Rxb of the filter component 20are connected to each other and the reception electrode Rxa and theoutput terminal 15 b of the second filter 15 are connected to each othervia the reception terminal Rxb. In addition, the common electrode ANTaof the module substrate 2 and the common terminal ANTb of the filtercomponent 20 are connected to each other and the common electrode ANTa,the output terminal 14 b of the first filter 14 and the input terminal15 a of the second filter 15 are connected to each other via the commonterminal ANTb. In addition, the ground electrode GNDa of the modulesubstrate 2 and the ground terminals GNDb of the filter component 20 areconnected to each other and the ground electrode GNDa and groundingpoints of the filters 14 and 15 are connected to each other via theground terminals GNDb.

As described above, in this preferred embodiment, a circuit that issimilar to the circuit illustrated in FIG. 2 is provided and thefollowing effect is able to be achieved. That is, the WL-CSP-structurefilter component 20 is mounted on the module substrate 2, the filtercomponent 20 having undergone further profile reduction as a result ofthe cover layer 23, in which the first wiring electrode 17 is provided,being formed so as to be thin. Therefore, the high-frequency module 1,which has been further reduced in profile and size, is able to beprovided.

In addition, the present invention is not limited to the above-describedpreferred embodiments and various modifications not described above canbe made so long as they do not deviate from the gist of the presentinvention and the configurations of the above-described preferredembodiments may be combined with each other in any manner. For example,one end of the first inductor L1 may be connected to another parallelarm resonator. In addition, a plurality of first inductors L1 may beprovided and each first inductor L1 may be connected to a differentparallel arm resonator.

Furthermore, the configuration of a ladder filter that includes thefirst filter 14 is not limited to the example described above and thefirst filter 14 may be formed in any manner so long as the configurationof the ladder filter is a configuration that includes a shunt-connectedresonator in order to adjust the filter characteristics. In addition,the configuration of the second filter 15 may include a resonator thatutilizes elastic waves and the second filter 15 may be defined by atypical LC filter. Furthermore, not limited to SAW filters, the firstfilter 14 and the second filter 15 may be defined by FBAR or SMR BAWfilters that utilize bulk elastic waves as filters that utilize elasticwaves.

In addition, in the above-described preferred embodiments, ahigh-frequency module 1 in which a single filter component 10 or 20 ismounted on a module substrate 2 is described as an example, but ahigh-frequency module may be provided by mounting two or more filtercomponents 10 or 20 on a module substrate 2, and in such a case a switchIC may be mounted on the module substrate 2 and the filter components 10and 20 to be used may be selectively switched between by the switch ICamong the plurality of filter components 10 or 20 mounted on the modulesubstrate 2.

Furthermore, a ground electrode layer may be further provided on themounting surface 2 a of the module substrate 2. In this case, a notchmay be provided in the ground electrode layer in a portion where thefirst wiring electrode 17 and the second wiring electrode 6 overlap inplan view.

Preferred embodiments and modifications thereof of the present inventionmay be broadly applied to high-frequency modules that include a modulesubstrate on which a filter component is mounted.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

What is claimed is:
 1. A high-frequency module comprising: a filtercomponent including: a first terminal to which an RF signal is input; afirst filter through which the RF signal input to the first terminalpasses; a second terminal that outputs the RF signal that has passedthrough the first filter; a third terminal; and a first inductorincluding one end connected to the first filter and another endconnected to the third terminal; a module substrate on which the filtercomponent is mounted; and a second inductor that is provided, inside themodule substrate, directly below the filter component in plan view andincludes one end connected to the third terminal and another endconnected to ground; wherein the first filter includes: a plurality ofseries arm resonators that are arranged in a series arm that connects aninput terminal and an output terminal of the first filter; and aplurality of parallel arm resonators that are connected to the seriesarm; wherein the one end connected to the first filter of the firstinductor is connected to at least one of the plurality of the parallelarm resonators; and a first wiring electrode that defines the firstinductor and a second wiring electrode that defines the second inductorat least partially overlap in plan view.
 2. The high-frequency moduleaccording to claim 1, wherein the first wiring electrode and the secondwiring electrode are structured such that currents that flow in portionsthereof where the first wiring electrode and the second wiring electrodeoverlap flow in a same direction.
 3. The high-frequency module accordingto claim 1, wherein the first inductor and the second inductor have asame inductor structure of a spiral or helical shape and the firstwiring electrode and the second wiring electrode are wound in a samedirection.
 4. The high-frequency module according to claim 1, whereinthe filter component includes a filter substrate on which the pluralityof series arm resonators and the plurality of parallel arm resonatorsare located in a prescribed area of one main surface thereof, and apackage substrate on which the filter substrate is mounted; and thefirst wiring electrode is provided inside the package substrate.
 5. Thehigh-frequency module according to claim 1, wherein the filter componentincludes: a filter substrate on which the plurality of series armresonators and the plurality of parallel arm resonators are located in aprescribed area of one main surface thereof; an insulating layer thatsurrounds the prescribed area; a cover layer that is arranged on theinsulating layer and covers the plurality of series arm resonators andthe plurality of parallel arm resonators; and a space that is surroundedby the filter substrate, the insulating layer and the cover layer; thefirst terminal, the second terminal and the third terminal are exposedat a main surface on a side opposite the surface where the space islocated and are connected to mounting electrodes provided on a mountingsurface of the module substrate; and the first wiring electrode isprovided inside the cover layer.
 6. The high-frequency module accordingto claim 1, further comprising: a third inductor that adjustscharacteristics of the first filter, the third inductor including athird wiring electrode provided inside the module substrate, includingone end thereof connected to at least one of the plurality of parallelarm resonators and another end thereof connected to ground; wherein thesecond wiring electrode and the third wiring electrode are structuredsuch that directions of currents that flow through the second inductorand the third inductor are opposite to each other.
 7. The high-frequencymodule according to claim 1, wherein the filter component furtherincludes: a second filter including a plurality of resonators andthrough which an RF signal input to the second terminal passes; and afourth terminal that outputs the RF signal that has passed through thesecond filter; wherein a pass band of the first filter is a frequencyband of a transmission signal; and a pass band of the second filter is afrequency band of a reception signal.
 8. The high-frequency moduleaccording to claim 1, wherein the filter component is a duplexer.
 9. Thehigh-frequency module according to claim 1, wherein the high-frequencymodule is a high-frequency antenna switching module.
 10. Thehigh-frequency module according to claim 1, wherein the module substrateincludes a multilayer body.
 11. The high-frequency module according toclaim 1, further comprising a matching network including at least one ofan inductor and a capacitor.
 12. The high-frequency module according toclaim 1, wherein the filter component has one of a chip size packagestructure and a wafer level chip size package structure.
 13. Thehigh-frequency module according to claim 10, wherein the multilayer bodyincludes via conductors and in-plane conductor patterns.
 14. Thehigh-frequency module according to claim 4, further comprising a resinlayer provided on the package substrate.
 15. The high-frequency moduleaccording to claim 1, wherein the first filter includes a plurality ofsurface acoustic wave resonators.
 16. The high-frequency moduleaccording to claim 1, wherein the second filter is a balanced filter.17. The high-frequency module according to claim 4, wherein the firstwiring electrode is provided in the package substrate, and the secondwiring electrode is provided in the module substrate.
 18. Thehigh-frequency module according to claim 1, further comprising a groundelectrode layer on a mounting surface of the module substrate, whereinthe ground electrode layer includes a notch at a location where thefirst and second wiring electrodes at least partially overlap in planview.
 19. A mobile communication terminal comprising: a mothersubstrate; and the high-frequency module according to claim 1 mounted onthe mother substrate.
 20. The mobile communication terminal according toclaim 19, wherein the mobile communication terminal is one of a cellularphone and a mobile information terminal.